View SSF5508_4556077.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SSF5508
Feathers: Advanced trench process technology Ultra low Rdson, typical 6mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF5508 is a new generation of middle voltage and high current N-Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF5508 is assembled in high reliability and qualified assembly house. Application: Power switching application SSF5508 TOP View (TO220) ID =110A BV=55V Rdson=4.5 m(typ.)
Absolute Maximum Ratings Parameter ID@Tc=25 C ID@Tc=100C IDM PD@TC=25C VGS dv/dt EAS EAR TJ TSTG Thermal Resistance Parameter RJC RJA Junction-to-case Junction-to-ambient Parameter BVDSS RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Forward transconductance Drain-to-Source leakage current Gate-to-Source forward leakage
2009.12.26
Max. 110 80 400 170 2.0 20 31 480 TBD -55 to +150
Units A W W/ C V v/ns mJ
Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current Power dissipation Linear derating factor Gate-to-Source voltage Peak diode recovery voltage Single pulse avalanche energy Repetitive avalanche energy Operating Junction and Storage Temperature Range Min. -- -- Min. 55 -- 2.0 -- -- -- 58 -- -- -- Typ. -- 4.5
C
Typ. 0.73 --
Max. -- 62
Units C/W
Electrical Characteristics @TJ=25 C(unless otherwise specified) Max. Units -- 8 4.0 -- 2 10 100 A nA V m V S Test Conditions VGS=0V,ID=250A VGS=10V,ID=68A VDS=VGS,ID=250A VDS=5V,ID=30A VDS=55V,VGS=0V VDS=55V, VGS=0V,TJ=150C VGS=20V
page 1of5
(c)Silikron Semiconductor CO.,LTD.
Version : 1.0
SSF5508
Gate-to-Source reverse leakage Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance -- -- -- -- -- -- -- -- -- -- -- -- 90 14 24 18.2 15.6 70.5 13.8 3150 300 240 -100 -- -- -- -- -- -- -- -- -- -- pF nS nC VGS=-20V ID=30A VDD=30V VGS=10V VDD=30V ID=2A ,RL=15 RG=2.5 VGS=10V VGS=0V VDS=25V f=1.0MHZ
Source-Drain Ratings and Characteristics Parameter IS ISM Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Reverse Recovery Time Forward Turn-on Time . . Min. -- -- -- Typ. -- -- -- 57 107 Max. 110 A 400 1.3 -- -- V nS nC Units Test Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ=25C,IS=68A,VGS=0V TJ=25C,IF=68A di/dt=100A/s
VSD Diode Forward Voltage trr ton Qrr Reverse Recovery Charge
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes: Repetitive rating; pulse width limited by max junction temperature. Test condition: L =0.3mH, ID = 57A, VDD = 27.5V
Pulse width300S, duty cycle1.5% ; RG = 25 Starting TJ = 25C
EAS test circuit:
BVdss
Gate charge test circuit:
(c)Silikron Semiconductor CO.,LTD.
2009.12.26
Version : 1.0
page
2of5
SSF5508
Switch Time Test Circuit
Switch Waveforms:
Transfer Characteristic
Capacitance
On Resistance vs Junction Temperature
Breakdown Voltage vs Junction Temperature
(c)Silikron Semiconductor CO.,LTD.
2009.12.26
Version : 1.0
page
3of5
SSF5508
Gate Charge
Source-Drain Diode Forward Voltage
Safe Operation Area
Max Drain Current vs Junction Temperature
Transient Thermal Impedance Curve
(c)Silikron Semiconductor CO.,LTD.
2009.12.26
Version : 1.0
page
4of5
SSF5508
TO220 MECHANICAL DATA:
(c)Silikron Semiconductor CO.,LTD.
2009.12.26
Version : 1.0
page
5of5

▲Up To Search▲

Price & Availability of SSF5508

	To Download SSF5508 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .